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Method for the reduction of keff in semiconductor devices using a bilayer as the etch-stop layer

IP.com Disclosure Number: IPCOM000009255D
Publication Date: 2002-Aug-13

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for the reduction of the overall effective dielectric constant (keff) in semiconductor devices using separate materials to form the interface with Cu interconnects and act as the etch-stop (ES) layer. Benefits include improved performance and improved manufacturability.