Improved Electromigration Resistance of Copper Interconnects using Multiple Cladding Layers
Original Publication Date: 2002-Aug-15
Included in the Prior Art Database: 2002-Aug-15
With the advent of more advanced generations of complementary metal oxide semiconductor (CMOS) technology, the demands for performance, particularly operating current density, continue to increase. These demands for increased current density directly translates into a demand for increased interconnect electromigration (EM) resistance. We have discovered that certain schemes of interconnect cladding, using multiple layers of Ta and NiFe, lead to an improved EM performance. Although cladding was originally developed as a flux concentrator in magnetoresistive random access memory (MRAM) technologies, it can be used to improve the EM performance even in interconnect levels and/or technologies that do not require cladding.