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Implant Enhanced Silicon Dioxide Seal Trench Isolation

IP.com Disclosure Number: IPCOM000009457D
Publication Date: 2002-Aug-26
Document File: 3 page(s) / 107K

Publishing Venue

The IP.com Prior Art Database


A new technique using implant enhanced silicon dioxide to form a trench isolation structure having low cost, low stress, and minimal processing steps is presented as an alternative to other component isolation schemes used in integrated circuit manufacturing. Trench isolation structures are commonly used to provide electrical isolation and reduce coupling between adjacent components on a semiconductor substrate. A new method and structure is presented having the advantages of: · Scaleable for applications where Epi or substrate layer thickness vary. · Reduced coupling of adjacent circuits due to inherent low dielectric constant (less than 1 'k'). · Scalability not limited by circuit separation or stress.