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IMPROVEMENT IN ELECTRICAL PROPERTIES OF MULTICOMPONENT OXIDE CAPACITORS BY STUFFING ELECTRODES WITH OXYGEN PLASMA

IP.com Disclosure Number: IPCOM000009568D
Original Publication Date: 1999-Sep-01
Included in the Prior Art Database: 2002-Sep-03

Publishing Venue

Motorola

Related People

Authors:
Peir Chu Sufi Zafar

Abstract

High/medium dielectric constant materials such as Ba,,,Sr,.,TiO, (BST), SrTiO, (STO), SrBi;Ta,O, (SBT) or Ta,O, have been considered as materials of potential for high density (> 1 Gbit) DRAM, thin gate oxide, and non-volatile memory applications.