METHOD OF PROTECTING GAAS SURFACES FOR PATTERNING IN MIXTURES OF CHLORINE AND FLUORINE PLASMAS
Original Publication Date: 2000-May-01
Included in the Prior Art Database: 2002-Sep-23
Plasma etching of GaAs and other III - V compounds is oftentimes required for isolating device structures, forming portions of devices such as emitter and collector regions of heterojunction bipolar transistors, and forming facets for optical devices. A method of protecting GaAs surfaces with a hardmask when etching in combinations of fluorine and chlorine plasmas such as BCl31SF6 or SiCI41SF6 is described.