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METHOD OF PROTECTING GAAS SURFACES FOR PATTERNING IN MIXTURES OF CHLORINE AND FLUORINE PLASMAS

IP.com Disclosure Number: IPCOM000009846D
Original Publication Date: 2000-May-01
Included in the Prior Art Database: 2002-Sep-23
Document File: 2 page(s) / 113K

Publishing Venue

Motorola

Related People

Authors:
J. K. Abrokwah M. Sadaka F. Clayton

Abstract

Plasma etching of GaAs and other III - V compounds is oftentimes required for isolating device structures, forming portions of devices such as emitter and collector regions of heterojunction bipolar transistors, and forming facets for optical devices. A method of protecting GaAs surfaces with a hardmask when etching in combinations of fluorine and chlorine plasmas such as BCl31SF6 or SiCI41SF6 is described.