DYNAMICALLY ADJUSTING THE REFRESH RATE OF SEU SENSITIVE ELEMENTS
Original Publication Date: 2000-May-01
Included in the Prior Art Database: 2002-Sep-23
Recently commercially available extremely dense memory technology is been inserted into space based systems. These next generation systems utilize these highly dense memory devices to develop processor memory elements on the order of many mega bytes. The single event upset (SEU) rate of these memory devices are typically two to three orders of magnitude greater than memory devices which are designed and manufactured on a radiation hardened/SEU tolerant line. As a result, SEU mitigation is required to be designed into these systems to reduce the system impact of upsets.