VSS SUBSTRATE TIE PLUS BURIED LAYER FOR RF IMPROVEMENTS
Original Publication Date: 2000-May-01
Included in the Prior Art Database: 2002-Sep-24
The manufacturability and performance of RF devices depends on several key parameters. For example, obtaining good isolation and making a low ohmic contact to a heavily doped buried layer and substrate is critical. The buried layer is fonned by implanting, followed by a drive-in cycle, or a doped Epi layer. The formation of the isolation layer is typically formed by a heavily doped trench making contact to a buried layer.