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REDUCE INSERTION LOSS IN GAAS FET RF SWITCH USING NEGATIVE VOLTAGE DERIVED FROM RF OUTPUT

IP.com Disclosure Number: IPCOM000009872D
Original Publication Date: 2000-May-01
Included in the Prior Art Database: 2002-Sep-25

Publishing Venue

Motorola

Related People

Authors:
Simon Jones

Abstract

The effect of Lower Control Voltages on insertion loss in GaAs Fet RF antenna switches is mitigated using a negative voltage derived from the transmitter output.