ION IMPLANT TILT - TWIST CALCULATOR AND VISUALIZATION TOOL
Original Publication Date: 2000-May-01
Included in the Prior Art Database: 2002-Sep-25
The specification of the alignment of the silicon crystal structure with respect to the ion beam direction is an important ion implant parameter. The ion beam orientation is commonly specified by the'tilt' and 'twist' angles. The tilt angle specifies the angle between the ion beam direction and the normal vector to the wafer surface. The twist angle specifies the angle between the wafer notch or flat and the vector formed by the projection of the ion beam direction vector on to the wafer.