TISI ISLANDS PREVENTION USING PSD IMPLANT MASK
Original Publication Date: 2000-May-01
Included in the Prior Art Database: 2002-Sep-25
The incorporation of boron (B) and fluorine (F) into a field oxide region in TiSi based technology leads to an undesirable TiSi formation on the field oxide. Studies show that a BF2 implanted field oxide produces stable TiSi, while n-type or nonimplanted substrates do not. TiSi can be prevented from forming on field oxide by prohibiting BF2 implantation into the PMOS field areas by using a PSD (P+ Source Drain) implant mask as shown in Figure I below.