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A Novel Floating Trap NVSM

IP.com Disclosure Number: IPCOM000009924D
Original Publication Date: 2002-Sep-27
Included in the Prior Art Database: 2002-Sep-27

Publishing Venue

Motorola

Related People

Authors:
Bunmi Adetutu Jiankang Bu Hsing Tseng

Abstract

High voltage requirement of conventional Nonvolatile Semiconductor Memory (NVSM) create a reliability issue, as it exceeds the voltage limits of the scaled peripheral CMOS devices. In this article, we describe a novel floating trap NVSM, which replaces the nitride storage layer with hafnium metal oxide, hence lowering NVSM programming voltage and improving retention reliability.