A Novel Floating Trap NVSM
Original Publication Date: 2002-Sep-27
Included in the Prior Art Database: 2002-Sep-27
High voltage requirement of conventional Nonvolatile Semiconductor Memory (NVSM) create a reliability issue, as it exceeds the voltage limits of the scaled peripheral CMOS devices. In this article, we describe a novel floating trap NVSM, which replaces the nitride storage layer with hafnium metal oxide, hence lowering NVSM programming voltage and improving retention reliability.