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Monocrystalline PLZT Curved Surface Optical And Electro-Optical Components On A Silicon Wafer

IP.com Disclosure Number: IPCOM000010099D
Original Publication Date: 2002-Oct-22
Included in the Prior Art Database: 2002-Oct-22

Publishing Venue

Motorola

Related People

Authors:
Gregory J. Dunn Robert T. Croswell

Abstract

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. This epitaxial method permits the growth of high quality monocrystalline lead lanthanum zirconate titanate (PLZT) optical and electro-optical components, such as lenses, prisms, and waveguides, with curved or straight surfaces, on a strontium titanate (STO) accommodating buffer layer on a silicon wafer, offering substantial cost advantages over single crystal STO substrates of the prior art, and allowing monolithic integration with silicon and compound semiconductor electronics, lasers and light emitting diodes, and optical detectors.