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Disclosed is a method for oxide alignment production for a liquid-crystal-on-silicon (LCoS) light modulator and other liquid crystal (LC) devices. Benefits include improved ease of manufacturing.
English (United States)
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Method for oxide alignment production for a LCoS light
modulator and other LC devices
Disclosed is a method for oxide alignment production for a
liquid-crystal-on-silicon (LCoS) light modulator and other liquid crystal (LC)
devices. Benefits include improved ease of
� � � � � LCoS with
surface-perpendicular alignment provides advantages, such as a very-dark
offstate, high-contrast images, and high light-throughput efficiency. It is
important to have a small offstate pretilt of the LC of a few degrees off
perpendicular. In conventional LCoS light modulators, the perpendicular-tilted
alignment (PTA) is obtained by shallow-angle ion-beam-etching of the SiO2
surface and treating it with alcohol for a specific pretilt for a given long
chain (see Figure l).
� � � � � In another case, SiOx
films are deposited in a high vacuum by thermal evaporation at the angle range
of 75-85 degrees on small substrates. Extreme angular range for deposition of
silicon oxide films produces an oxide film with a special saw-like structure,
which together with alcohol chains were the main factors in determining the
pretilt. The main problem of the execution of this technique is the requirement
of unusually high, nonstandard vacuum deposition equipment to provide large angles
for the deposition of silicon oxide on 200-mm Si substrates. Additionally, the
productivity of this method is low.
� � � � � The stability of
nonorganic alignment of SiOx (and other transparent oxides) is
increased with the use of alcohol bonds. This mix can be obtained from
developed Si sol-gel. After a Si polymerization reaction, alcohol molecules