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SiO2 Bridge for Defining Magnetic Read Head Disclosure Number: IPCOM000010288D
Original Publication Date: 2002-Nov-18
Included in the Prior Art Database: 2002-Nov-18
Document File: 3 page(s) / 648K

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SiO2 Bridge for Defining Magnetic Read Head

Our disclosure renders an image transfer method for manufacturing magnetic heads with extensibility. The convential lift-off process, which uses bilayer resist structure, suffers serious fensing problems and structure instability when the critical dimensions go down below 200nm. Bridge structures provide promises for better lift-off process without fenses.

This disclosure uses a image transfer process on the SiO2 tri-layer structure. The process flow is illustrated in figure 1. Step1-3 show the application of durimide, SiO2, and photoresist, respectively. The application of SiO2 can be implemented via sputtering, ion beam deposition, or CVD. Step 4 is the exposure and development of the resist. In step 5, CF4 is used to etch SiO2 film where there is no resist protection. In step 6, an isotropical etch is used to remove the underlayer polymer and then remove the photoresist. A SEM image of a 4um-long SiO2 bridge is shown in figure 2.

The advantages of this method includes:

BARC: the SiO2 layer can be used as a anti-reflection coating to minimize the

standing waves as well as CD variation. Extensibility: This method can be used in combining with 248nm, 193nm, 157nm,

and/or e-beam lithography. Material strength: The sputtering machine can be tuned to deposit SiO2

mechanically strong to support the bridge structure. Stress tunability: The gas mixture can be tuned to improve the film stress and thus

the bridge mechanical pro...