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Nonvolatile CAM (Content-Addressable Memory) cell using MRAM (Magnetic RAM) memory elements Disclosure Number: IPCOM000010378D
Original Publication Date: 2002-Nov-22
Included in the Prior Art Database: 2002-Nov-22

Publishing Venue



Disclosed is nonvolatile content-addressable memory (CAM) cell that has high-speed, low-power, and soft-error immune characteristics. The cell uses magnetic tunnel junction (MTJ) memory elements for non-volatility that are being used in magnetic or magneto-resistive memories (MRAM).