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Inverted Die in SOIC Package for Improved EMC Performance Disclosure Number: IPCOM000011601D
Original Publication Date: 2003-Mar-07
Included in the Prior Art Database: 2003-Mar-07

Publishing Venue


Related People

Dragan Mladenovic Mike Chapman David J. Monk


An electromagnetic compatible multi-chip inertial sensor product has been developed by creating a psuedo-Faraday shield around the silicon by inverting the leadframe and thus creating a “die down” structure. This packaging structure allows for the metal leadframe flag to act as the grounded surface on the topside of the package (backside of the die). A grounded metal trace can be added to the printed circuit board on the backside of the package (topside of the die) to complete the Faraday shield. EMC performance in excess of 350 V/m has been observed with the inverted leadframe structure, compared with EMC test results on non-inverted leadframe samples with the same die of only 50 V/m. The work has been performed on SOIC samples but could be extended to other types of packages.