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Integration Scheme For Germanium Based Device Applications Disclosure Number: IPCOM000011604D
Original Publication Date: 2003-Mar-07
Included in the Prior Art Database: 2003-Mar-07

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Craig Jasper Mike Kaneshiro


Implantation and activation of Germanium based devices has been a challenge for over 40 years. Historical publications indicate that the electrical activation of germanium was very difficult to control. Very few details have been published about the outgassing, activation, and passivation of single crystal germanium substrates. These publications indicate that there is a large amount of dopant loss during the activation process. However, the processing and experimental details are either not given or they are incomplete. From these publications it is unclear if the dopant is segregating into the oxide, or evaporating from the substrate. In either case the result is the same, a lack of active carriers within the material.