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Browse Prior Art Database

Method of Heat Sink Structure for SOI Circuit Application

IP.com Disclosure Number: IPCOM000011629D
Original Publication Date: 2003-Mar-10
Included in the Prior Art Database: 2003-Mar-10
Document File: 3 page(s) / 33K

Publishing Venue

Motorola

Related People

Authors:
Yanyao Yu Michael A. Mendicino Byoung W. Min

Abstract

This disclosure describes heat sink structures for semiconductor devices, especially for SOI circuits. SOI (=Silicon On Insulator) technology has received much attention because of its high performance capability over conventional bulk technology. However, SOI transistors are built on a layer of thermally insulating silicon dioxide, which can lead to higher operating temperatures than in equivalent bulk process devices. It is required to implement heat sink structure in order to reduce a temperature increase due to thermal insulation during SOI circuit application.