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Method of Heat Sink Structure for SOI Circuit Application Disclosure Number: IPCOM000011629D
Original Publication Date: 2003-Mar-10
Included in the Prior Art Database: 2003-Mar-10

Publishing Venue


Related People

Yanyao Yu Michael A. Mendicino Byoung W. Min


This disclosure describes heat sink structures for semiconductor devices, especially for SOI circuits. SOI (=Silicon On Insulator) technology has received much attention because of its high performance capability over conventional bulk technology. However, SOI transistors are built on a layer of thermally insulating silicon dioxide, which can lead to higher operating temperatures than in equivalent bulk process devices. It is required to implement heat sink structure in order to reduce a temperature increase due to thermal insulation during SOI circuit application.