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Method for sequential high-density plasma deposition and sputter etching for gap filling using low-mass sputtering agents

IP.com Disclosure Number: IPCOM000011847D
Publication Date: 2003-Mar-19

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for sequential high-density plasma deposition and sputter etching for gap filling using low-mass sputtering agents (such as hydrogen and helium). Benefits include improved gap filling performance, minimal incorporation of impurities, and improved ease of manufacturing.