Browse Prior Art Database

Method of improving leakage current in a MOS transistor

IP.com Disclosure Number: IPCOM000012079D
Original Publication Date: 2003-Apr-07
Included in the Prior Art Database: 2003-Apr-07

Publishing Venue

Motorola

Related People

Authors:
Vishnu Khemka Vijay Parthasarathy Ronghua Zhu Amitava Bose Todd Roggenbauer

Abstract

This publication proposes a novel scheme to improve the leakage current in MOS transistors in deep sub-micron technologies with shallow source/drain implants. The technique is specifically suitable for smart power technologies where, low-voltage CMOS devices are integrated with medium and high-voltage analog devices.