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Method for in-place electron bombardment of a low-K ILD or ES film

IP.com Disclosure Number: IPCOM000012783D
Publication Date: 2003-May-28

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for in-place electron bombardment of a low-dielectric constant (low-K) inter-layer dielectric (ILD) or etch-stop (ES) film during the film deposition. Benefits include improved performance.