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Method for dynamic MOS device sidewall spacer physical dimension targeting based on gate conductor physical and/or electrical dimensions

IP.com Disclosure Number: IPCOM000012784D
Publication Date: 2003-May-28

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for dynamic metal oxide semiconductor (MOS) device sidewall spacer physical dimension targeting based on gate conductor physical and/or electrical dimensions. Benefits include improved functionality and improved performance.