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Method of Making a Silicon Based Photodetector by Incorporating Germanium Dots

IP.com Disclosure Number: IPCOM000012804D
Original Publication Date: 2003-May-28
Included in the Prior Art Database: 2003-May-28

Publishing Venue

Motorola

Related People

Authors:
Shawn G. Thomas Thomas E. Zirkle

Abstract

We describe a method for realizing a photodetector, having absorption in the 1.3 – 1.55mm wavelength regime, which is compatible with standard Si manufacturing processes and incorporates dislocation-free Germanium dots as the absorption volume. In the preferred embodiment, the detector is a normal incidence device, but not limited to this configuration. Implementation of the detector utilizes selective epitaxial growth for pre-determined placement of the Germanium dots followed by standard Si processing steps to realize the functional device.