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A Method for Physical Vapor Deposition of Films with Low Damage

IP.com Disclosure Number: IPCOM000012805D
Original Publication Date: 2003-May-28
Included in the Prior Art Database: 2003-May-28

Publishing Venue

Motorola

Related People

Authors:
Da Zhang Bich-Yen Nguyen Srikanth Samavedam Jamie Schaeffer

Abstract

Physical vapor deposition (PVD) technology for thin film formation in semiconductor device fabrication is advantageous in that much lower impurity level is induced as compared to its ALD or CVD counterparts. However one critical issue limiting its wide application in the front end is the sputter damage caused by plasma ions. The current invention overcomes the problem by applying a PVD process with a helium plasma ignition followed by a helium dilution. As helium ion is free of sputtering damage capability due to its extremely low ion mass, the invention significantly reduces damage at the interface of the deposited film and the substrate.