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DOUBLE DUAL GMR HEAD

IP.com Disclosure Number: IPCOM000013305D
Original Publication Date: 2000-Jan-01
Included in the Prior Art Database: 2003-Jun-18

Publishing Venue

IBM

Abstract

A new design for the GMR is disclosed to enhance the magnetoresistance coefficient. The design utilizes two FREE layers to enhance the spin dependent scattering to achieve higher magnetoresistance. The first structure utilizes three antiferromagnetic layers to provide pinning to four antiparallel pinned ferromagnetic layers as shown below. The middle antiferromagnetic layer is shared by the two antiparallel pinned layers. Seed layer/AFM/FM(1)/Ru/FM(2)/Cu/Free layer/Cu/FM(3)/Ru/FM(4)/AFM/FM(5)/Ru/FM(6)/Cu/Free layer/Cu/FM(7)/Ru/FM(8)/AFM/Ta Seed layer examples: NiMnO/Ta, Ta, Al2O3/NiMnO/Ta