Browse Prior Art Database

REVERSE NANO CMOS

IP.com Disclosure Number: IPCOM000013390D
Original Publication Date: 2001-Apr-01
Included in the Prior Art Database: 2003-Jun-18

Publishing Venue

IBM

Abstract

A method is proposed to fabricate nanoelectronics, e.g. self assemply, contact printing, SPM fabrication, molecular electronics, micromechanical storage, single-molecule amplifiers, tunneling molecular elecrophotonics etc.. on CMOS processed microelectronic circuits. Electronic circuits are made starting with the electronic elements, then the first level of fine wiring is added, then more processing steps are used to put on more layers of wiring and interconnects. The more layers, the thicker the wiring gets. Now for a molecular approach which would use the wiring of CMOS the idea for a nanoelectronic circuit is as follows: REVERSE CMOS: Here it is started with a wafer with the higher level wiring and one goes progressively backwards till the surface is planar with the finest level wiring on the surface (M1, M0). Although one may not consider this the best way to make today's chips, a use in 2020 may be worthwhile.