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Method for detecting positively charged metallic impurities in virgin and processed heavily boron-doped Si wafers

IP.com Disclosure Number: IPCOM000013533D
Publication Date: 2003-Jun-18

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for detecting positively charged metallic impurities in virgin and processed heavily boron-doped silicon (Si) wafers. Benefits include improved performance, improved throughput, and improved cost effectiveness.