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Pulse Current Supply to Wafer to Minimize Effect of Gas Generation and Resist Lifting During Electroplating

IP.com Disclosure Number: IPCOM000013792D
Original Publication Date: 1999-Oct-01
Included in the Prior Art Database: 2003-Jun-18

Publishing Venue

IBM

Related People

Authors:
Andrew Chiu Richard Contreras Joseph Fatula Bob Hitzfeld

Abstract

A by-product of electroplating certain metals on to silicon or ceramic wafers is gas generation which causes resist lifting or undesired voids in the plated film. This disclosure proposes the use of pulse plating, where current to the wafer is turned on and off at intermittent time intervals during the electroplating process to allow gas bubbles to flow away from the active plating area. 1