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Method for Inductive Coil Fabrication Disclosure Number: IPCOM000013981D
Original Publication Date: 2000-Dec-01
Included in the Prior Art Database: 2003-Jun-19

Publishing Venue



This disclosure discusses a process to create high aspect ratio structures separated by a thin insulating vertical barrier. The preferred embodiment would be accomplished by forming a thin, uniform, and conformal silicon oxide film over a lithographically defined step via decomposition of TEOS (tetraethylorthosilicate). An oxide sidewall mask would subsequently be used as a barrier material which would be reactively ion etched and replaced with a polymeric insulator. One skilled in the art of vacuum deposition of thin films could deposit a low temperature TEOS thin film.[1] This conformally covers a lithographically defined structure with silicon oxide. This thin film would then be subjected to a brief anisotropic etch which would primarily remove the horizontal surfaces of the oxide film. Filling the voids with a polymer (e.g. photoresist) allows for the exposure of the sidewall. Sidewall exposure may be accomplished with the addition of a mechanical planarization step or surface sputtering step. Patterned stru ctu re etchable underlayer or seedlayer