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AP spin valve with improved signal using Si in one pinned layer for improved DR/R and Sheet Resistance

IP.com Disclosure Number: IPCOM000014602D
Original Publication Date: 2002-Jan-27
Included in the Prior Art Database: 2003-Jun-19

Publishing Venue

IBM

Abstract

The pinned 1 layer of an AP spin valve adds stability to the structure, but at the cost of lower DR/R. This is partly due to simple shunting--the extra layer pulls electrons away from the active layers. A secondary effect comes in from the fact that the pinned 1 layer is antiparallel to pinned 2. Figure 1 shows an AP spin valve in the high resistance state. The free layer is antiparallel to Pinned 2 (the reference layer). However, it is parallel to pinned 1, resulting in a low resistance for electrons travelling between the free layer and pinned 1. This reduces the GMR of the spin valve. . Figure 1