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Light Shield structure for Top Gate TFT-LCD

IP.com Disclosure Number: IPCOM000014608D
Original Publication Date: 2000-Mar-01
Included in the Prior Art Database: 2003-Jun-20

Publishing Venue

IBM

Abstract

Described herewith is the structure of TFT/LCD pixel which realize light-shield to reduce a-Si layer photo current induced by back light radiation with electrically separated metal layer. Pixel configuration is shown in the Figure . A-Si layer exists under Gate Line. Photo-induced leakage current flows between adjacent signal lines and this degrade displayed picture quality. To prevent this, Light-shield exists under Gate-line/a-Si pattern. Light-shield is made with metal layer and electrically separeted. To prevent light incidence through this light-shield separated portion, additional light-shield pattern is fabricated with different metal layer which is insulated from main light-shield layer such as signal-line(SL) layer. Light shield SL layer Gate Line