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The Texture-controlled Sputtering of Titanium for Low Temperature Silicidation Process

IP.com Disclosure Number: IPCOM000014725D
Original Publication Date: 2000-Aug-01
Included in the Prior Art Database: 2003-Jun-20

Publishing Venue

IBM

Abstract

Recently, the silicidation process is adopted in semiconductor manufacturing process. It is one of the most effective process to decrease the resistance of Poly/diffusion line. However, process margin is becoming smaller because of two reasons. First, the wiring in the semiconductor chip will become very narrow approximately less than 0.5 micron) to increase density of circuit. In this case, the minimum temperature to convert C49 phase to C54 phase is increased. Second, thin silicide layer is required due to shallow junction. In this case, the maximum temperature to convert from C49 phase to C54 phase is decreased. As a result, process margin is very small. see Figure 1. Sheet resistance Narrow line Thin film