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AP-Pinned Boundary Exchange Stabilization for GMR Head Disclosure Number: IPCOM000014968D
Original Publication Date: 2001-Aug-01
Included in the Prior Art Database: 2003-Jun-20

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Disclosed is a new structure for the magnetic stabilization of the GMR head. In this structure, the passive areas of the sensor free layer are pinned using a double antiparallel pinned structure. Using double antiparallel pinned structure, the magnetostatic bias is also applied to the free layer in-addition to boundary stabilization. The structure is as follows: Layers in the passive area under the current carrying leads: Seed/PtMn/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Ru/CoFe(1)Ru/CoFe(2)PtMn/Ta/Lead/ Layers in the active area: Seed/PtMn/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Cap/ The key feature of this invention is that thicknesses of antiparallel pinned layers above the free layer CoFe(1), CoFe(2)} are selected so that CoFe(2) CoFe(1).