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Exchange Tab and in-stack Bias Structure for Tunnel Valve Disclosure Number: IPCOM000014969D
Original Publication Date: 2001-Aug-01
Included in the Prior Art Database: 2003-Jun-20

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The boundary exchange stabilization and In-stack magnetostatic bias addition is accomplished for the tunnel valve heads. Using antiparallel pinned layers in the In-stack structure, its magnetostatic bias is added to the boundary exchange stabilization. In addition, ferromagnetic layers in the passive region are oxidized to avoid current shunting through passive areas for the tunnel valve. The layers in the active area are: Shield 1/Ta/PtMn/CoFe/Ru/CoFe/AlOx barrier/CoFe/NiFe/Ta/CoFe(1)/Ru/CoFe(2)/PtMn/Ta/Shield 2 The layers in the passive area are: Shield 1/Ta/PtMn/CoFe/Ru/CoFe/AlOx barrier/CoFe/NiFeO/CoFe/PtMn/Ta/Sheild