Magnetic Stabilization for the GMR Head
Original Publication Date: 2001-Aug-01
Included in the Prior Art Database: 2003-Jun-20
Disclosed is a new structure which achieves addition of boundary exchange and in-stack magnetostatic bias for the free layer of the GMR head. The passive region of the free layer is pinned using antiparallel pinned layers while the in-stack bias layer is simple pinned. The layers are as follows: In the passive region: Seed/PtMn/CoFe/Ru/CoFe/Cu/CoFe(1)/Ru/CoFe(2)/PtMn/Ta/Lead/ In the active region: Seed/PtMn/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Ta/CoFe/PtMn/ The addition of these two stabilization layers allows thinner ferromagnetic layers in the in-stack structure which can be strongly pinned.