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Method for Micro-Structuring/Machining Al2O3/TiC Free of Surface Redeposition

IP.com Disclosure Number: IPCOM000015060D
Original Publication Date: 2002-Jul-22
Included in the Prior Art Database: 2003-Jun-20

Publishing Venue

IBM

Abstract

The typical ABS etching process consists of Ion Milling (I/M) of Al2O3/TiC (N58) surfaces where ABS structures are defined by dry photo resist films. The I/M process using industrial pure Ar as the process gas always creates redeposition at the resist-N58 interface along the periphery of resist opening, where physical ion bombardment of exposed N58 substrate occurs. These redeposition materials were believed to be not soluble in aqueous solutions. When making ABS using this I/M technique, the accumulate redeposition materials create "fences" at ABS edge up to 12nm. This is critical for the low fly height slider products because the redeposition fences are possible causes for unwanted head/disc contacts, posing potential tribological problems. In this study, we developed a technique in which we use a mixture of Argon/Freon (CHF3) as the precursor gas for ion milling, followed by an aqueous based cleaning. It was found that following this process, the fences due to redeposition reduced to near nonexistence as shown in the table and AFM images below: Gas Mixture Fence Height 1st Wall Angle 2nd Wall Angle Etch Pocket Roughness Ar+Freon [sccm] [nm] [deg] [deg] [nm] 12+7 0.7 5 0.1 17