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Silicide Line Formation Technology by using Si Implant on Saliside Process

IP.com Disclosure Number: IPCOM000015175D
Original Publication Date: 2002-Jun-01
Included in the Prior Art Database: 2003-Jun-20

Publishing Venue

IBM

Abstract

Disclosed is a method to fablicate silicide lines of salicide process. This method is realized by using Si (or F) implantation on standard MOS process. A process sequence to manufacture the silicide line is shown by Fig. 1 and · 2. 1