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Method to Increase Surface Area for Microelectronic Applications

IP.com Disclosure Number: IPCOM000015477D
Original Publication Date: 2002-Aug-17
Included in the Prior Art Database: 2003-Jun-20

Publishing Venue

IBM

Abstract

This article describes a method to increase surface area for microelectronic applications. Object of the Invention : In this invention, a method to create a true three-dimensional surface area improvement is proposed. In other words, the method increases not only the exterior surface area of the structure, but also the interior surface area within the bulk of the structure. First, a porous insulating material is used as the skeleton. Then, a selective metal plating technique is used to deposit a high electrically and thermally conductive metal on the porous substrate. The drastically increased surface area can be used to improve on-chip thermal dissipation or to form ultra high density capacitors. Background of Porous Oxide