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SPIN VALVE TRANSISTOR WITH THINNER BASE LAYER

IP.com Disclosure Number: IPCOM000015592D
Original Publication Date: 2002-Jan-07
Included in the Prior Art Database: 2003-Jun-20

Publishing Venue

IBM

Abstract

We disclose a structure for Spin Valve for application to Spin Valve Transistor. The structure is as follows:Emitter/Ru/Co/Cu/CoFe/Cu/Collector. The "Ru" metal has HCP structure and enhances the magnetocrystalline Hk of the "Co" layer for pinning purpose. The "Cu" cap isolates the spin valve from the collector as well as enhances the soft magnetic properties of the free layer. 1