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Improved Etch Depth Uniformity by Compensating Ion Mill Etching

IP.com Disclosure Number: IPCOM000015695D
Original Publication Date: 2002-Jul-24
Included in the Prior Art Database: 2003-Jun-21

Publishing Venue

IBM

Abstract

We are describing a two-step Ion Mill Process. This includes a Low Etch Rate process step, at prescribed etch angle and a High Etch Rate process step, which does the major etch. This will achieve a better uniformity for any Ion Mill process that demands a better etch depth uniformity profile than a normal, single etch step, process can deliver. The Ion Mill uniformity across the pallet (from the center to the outside pallet) usually has a high etch depth in the center and a low etch depth on the outside, such as the Control process in Figure (A), control (ctl- no ash) curve, whereas the two-step process, also depicted in Figure (A), shows improved etch depth profile. The one with longer compensation (ash 4min) gives better uniformity than the other (ash 2min). Figure (A) 12345678910 11 12 13 Position from the Center (cm)