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Chemical Etched Sloped Probe for Perpendicular Recording Inductive Heads Disclosure Number: IPCOM000015954D
Original Publication Date: 2002-Sep-19
Included in the Prior Art Database: 2003-Jun-21

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Disclosed is a design and a method of fabrication to achieve very high recording density at very high data rates. The recording density can be achieved by having a better resolving media (BPI). It can also be improved by decreasing the width of the recording probes (TPI). To this end, the probe thickness needs to be a fraction of the one needed for longitudinal recording. For high flux probes, it is desirable for a pole write head to be so designed that the flux density at the pole-tip is close to the saturation flux density of the magnetic material used for the pole, in order to obtain the largest possible write fields. In order to reach such a flux density but reduce the width of the write probe, a sloping probe is designed to increase the flux to the tip of the pole. The sloping region is obtained via chemical etching after the wafer is Alumina deposited and planarized using the CMP technique. The critical steps are the deposition of the Alumina planarizing layer and its chemical etching or CMP planarization. It is pictured a method where by changing the deposition bias during the sputter deposition cycle of the Alumina one could change its intrinsic properties. These properties occur mostly in the stoicheometry of the deposits with the most prominent effect being the increase of the etchability of the materials as the bias is reduced. There is a 3294.284 Angstrom per minute difference between the CMP rates of 0 bias and 200 bias deposited Alumina layers. Furthermore, by using a basic solution of Sodium Hydroxide and H2O with a PH of 11( .05) and the deposition sequence of different Alumina layers, one could produce a larger, preferential, etching on the CMP exposed layers closest to the metallic shaping layer. As the separation from the edge of the shaping layer increases, we encounter the layers of Alumina that were deposited with increasing bias. This increase in bias produces less etchability of the material. This continues until we reach the region (at the ABS plane) where the Alumina deposited is very resistant. We can now, by changing the thickness of the layers, produce the said sloped etch a set distance from the metallic edge of the shaping layer. Once the sloping profile is achieved, the wafer is measured via profilometry and later on covered with a full film of seed layer material. 1