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M2001-0043 Process for Formation and use of Amorphous Tantalum Oxynitride Hard mask for Patterning Tunnel Junction Structures

IP.com Disclosure Number: IPCOM000016681D
Original Publication Date: 2003-Jul-09
Included in the Prior Art Database: 2003-Jul-09

Publishing Venue

IBM

Abstract

Formation of an amorphous TaON hard mask for patterning of magnetic tunnel junctions for MRAM devices. The hard mask is formed by anodization of the TaN cap layer of a magnetic tunnel junction stack