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Disclosed is a method for implantation and annealing to reduce the nitride etch rate during phosphoric acid etch. Benefits include improved functionality and improved performance.
English (United States)
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This is the abbreviated version, containing approximately
73% of the total text.
Method for implantation and annealing to reduce the nitride
etch rate during phosphoric acid etch
Disclosed is a method for implantation and annealing to reduce
the nitride etch rate during phosphoric acid etch. Benefits
include improved functionality and improved performance.
� � � � � The etch rate of
low-pressure chemical vapor deposition (LPCVD) must be reduced for silicon
nitride in phosphoric acid. Due to the high etch rate of the conventional LPCVD
deposited nitride, a thicker film must be deposited prior to the phosphoric
etch to compensate for the amount that is etched. This adjustment can be
prohibitive in small openings where the thickness of the film prevents thicker
� � � � � The disclosed method
is implanting and annealing to reduce the nitride etch rate during phosphoric
acid etch (see Figure 1). A chamber-deposited silicon nitride film is used to
reduce the etch rate of the silicon nitride film in phosphoric acid.
� � � � � An implantation step
includes a high dose of boron or a similar substance to amorphize the LPCVD
nitride. An anneal step reforms the nitride in a stronger structure, reducing
the etch rate of the nitride by 70% in phosphoric acid. In contrast, the
annealing process produces a 30% reduction. The effect is partly chemical as a
different implant substance results in a different etch rate.
� � � � � The etch rate of a
PECVD nitride subjected to similar implant and anneal conditions increases by
25%. The net e...