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Method for implantation and annealing to reduce the nitride etch rate during phosphoric acid etch

IP.com Disclosure Number: IPCOM000016702D
Publication Date: 2003-Jul-09

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for implantation and annealing to reduce the nitride etch rate during phosphoric acid etch. Benefits include improved functionality and improved performance.