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High K MIMCap Dielectric Formed by Anodic Oxidation of Bottom TaN Plate

IP.com Disclosure Number: IPCOM000016712D
Original Publication Date: 2003-Jul-10
Included in the Prior Art Database: 2003-Jul-10

Publishing Venue

IBM

Abstract

Formation of MIMCap devices by oxidation of TaN by anodization to form a TaON insulator with high dielectric constant