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Low Plasma Power TiN Deposition for Low Leakage Antifuses

IP.com Disclosure Number: IPCOM000019288D
Publication Date: 2003-Sep-09

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The IP.com Prior Art Database

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Authors:
S. Brad Herner

Abstract

Titanium nitride deposited over a thin oxide in semiconductor devices by sputter deposition may damage the oxide, impacting device performance. Use of low plasma power during deposition prevents such damage.