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Low Plasma Power TiN Deposition for Low Leakage Antifuses Disclosure Number: IPCOM000019288D
Publication Date: 2003-Sep-09

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The Prior Art Database

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S. Brad Herner


Titanium nitride deposited over a thin oxide in semiconductor devices by sputter deposition may damage the oxide, impacting device performance. Use of low plasma power during deposition prevents such damage.