Browse Prior Art Database

SILICA-FILLED, ACETAL DIEPOXIDE FOR REDUCTION OF TCE MISMATCH IN HI-MEMS SUBSTRATES

IP.com Disclosure Number: IPCOM000019543D
Original Publication Date: 2003-Sep-18
Included in the Prior Art Database: 2003-Sep-18

Publishing Venue

IBM

Abstract

The use of a silica-filled epoxy precursor is shown to make possible the fabrication of stable MEMS structures in which epoxy dielectric layers separate metallization layers. The epoxy precursor undergoes slow polymerization and stress-reducing annealing at temperatures below the polymer?s final glass transition. A TCE as low as 29 ppm/oC in the cured filled epoxy prevents delamination driven by thermal mismatch in subsequent processing