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DOUBLE MAGNETIC TUNNEL JUNCTION WITH LARGE SPIN DIFFUSION LENGTH FREE LAYER

IP.com Disclosure Number: IPCOM000019591D
Publication Date: 2003-Sep-22

Publishing Venue

The IP.com Prior Art Database

Abstract

The dR/R can be enhanced using double magnetic tunnel junction structure or using double CPP GMR structure over single sensors if large spin diffusion length and/or large electron mean free path can be maintained. We disclose that use of CoFeCu alloy in the free layer of these sensors enhaces the spin diffusion length of electrons. In-addition, the addition of "Cu" to CoFe imrpves the magnetic softness (i.e. lowers the magnetic coercivity).