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Use of anisotropic wet etching and high rate RIE etching to fabricate precision silicon optical benches

IP.com Disclosure Number: IPCOM000019627D
Original Publication Date: 2003-Sep-23
Included in the Prior Art Database: 2003-Sep-23

Publishing Venue

IBM

Abstract

An improved method of forming a precision Silicon optical bench is disclosed where by using anisotropically wet etched features having the same maximum dimensions along with deep Si RIE to connect the wet etched features and a customized layer over the features on which the ball lens or optical fibers rest, the need to precisely align the anisotropic wet etching mask to the Si crystallographic direction can be relaxed.