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Damascene Scheme for Patterning Magnetic Tunnel Junctions

IP.com Disclosure Number: IPCOM000019666D
Publication Date: 2003-Sep-24

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The IP.com Prior Art Database

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Authors:
Walter Glashauser Sitaram Arkalgud Gerhard Mueller Igor Kasko

Abstract

Processing of magnetoresistive random access memory (MRAM) requires patterning of magnetic tunnel junction. They consist of multilayer metal stack separated by a thin dielectric tunnel barrier. An integration scheme for structuring magnetic stack using a damascene approach is proposed