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Damascene Scheme for Patterning Magnetic Tunnel Junctions Disclosure Number: IPCOM000019666D
Publication Date: 2003-Sep-24

Publishing Venue

The Prior Art Database

Related People

Walter Glashauser Sitaram Arkalgud Gerhard Mueller Igor Kasko


Processing of magnetoresistive random access memory (MRAM) requires patterning of magnetic tunnel junction. They consist of multilayer metal stack separated by a thin dielectric tunnel barrier. An integration scheme for structuring magnetic stack using a damascene approach is proposed