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MTJ Patterning by Collimated Deposition and CMP

IP.com Disclosure Number: IPCOM000019668D
Publication Date: 2003-Sep-24

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Authors:
Ihar Kasko Kia-Seng Low John Hummel Kwong Hong (Keith) Wong

Abstract

Processing of magnetic cells requires patterning of the multilayer magnetic stack consisting of several layers of magnetic films and a tunnel dielectric barrier. The known structuring processes (ion milling, reactive ion etching) do affect sidewalls of magnetic stack resulting in degradation of memory cell properties. Collimated deposition of magnetic films into a patterned trench in the dielectric enables processing of magnetic cells with desired shape. Combination of collimated deposition of magnetic films with a conformal deposition of a tunnel barrier prevents electrical shorting between top and bottom electrodes. No etching of magnetic materials is required.